RT Journal Article
T1 Good quality Al/SiNx : H/InP metal-insulator-semiconductor devices obtained with electron cyclotron resonance plasma method
A1 Mártil de la Plaza, Ignacio
A1 González Díaz, Germán
A1 García, S.
A1 Castán, E.
A1 Dueñas, S.
A1 Fernández, M.
AB We have obtained Al/SiNx:H/InP metal-insulator-semiconductor devices depositing SiNx:H thin films by the electron cyclotron resonance plasma method at 200 degrees C. The electrical properties of the structures were analyzed according to capacitance-voltage and deep level transient spectroscopy measurements. We deduce an inverse correlation between the insulator composition-the N/Si ratio-and the density of interface traps: those films with the maximum N/Si ratio (1.49) produce devices with the minimum trap density-2 x 10(12) cm(-2) eV(-1) at 0.42 eV. above the midgap. We explain the influence of film composition on the interface trap density in terms of a substitution of phosphorous vacancies at the InP surface, V-p, by N atoms coming from the insulator, N-Vp. The values obtained in our research for the interface trap distribution were similar to other published results for devices that use chemical and/or physical passivation processes of the InP surface prior to the deposition of the insulator.
PB American Institute of Physics
SN 0021-8979
YR 1998
FD 1998-01-01
LK https://hdl.handle.net/20.500.14352/59300
UL https://hdl.handle.net/20.500.14352/59300
LA eng
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NO © American Institute of Physics. This research was partially supported by the Spanish Government (CICYT), under Grant no. TIC 93/0175.
NO Spanish Government  (CICYT)
DS Docta Complutense
RD 6 may 2024