TY  - JOUR
AU  - Mártil de la Plaza, Ignacio
AU  - González Díaz, Germán
AU  - García, S.
AU  - Castán, E.
AU  - Dueñas, S.
AU  - Fernández, M.
PY  - 1998
DO  - 10.1063/1.366647
SN  - 0021-8979
UR  - https://hdl.handle.net/20.500.14352/59300
T2  - Journal of Applied Physics
AB  - We have obtained Al/SiNx:H/InP metal-insulator-semiconductor devices depositing SiNx:H thin films by the electron cyclotron resonance plasma method at 200 degrees C. The electrical properties of the structures were analyzed according to...
LA  - eng
M2  - 600
PB  - American Institute of Physics
KW  - Chemical-Vapor-Deposition
KW  - Interface Control Layer
KW  - Passivation
KW  - Temperature
KW  - Sulfide
KW  - GaAs.
TI  - Good quality Al/SiNx : H/InP metal-insulator-semiconductor devices obtained with electron cyclotron resonance plasma method
TY  - journal article
VL  - 83
ER  -