TY  - JOUR
AU  - Martil De La Plaza, Ignacio
AU  - González Díaz, Germán
AU  - Prado Millán, Álvaro Del
AU  - San Andrés Serrano, Enrique
PY  - 2001
DO  - 10.1088/0268-1242/16/7/302
SN  - 0268-1242
UR  - https://hdl.handle.net/20.500.14352/59108
T2  - Semiconductor Science and Technology
AB  - A comparative investigation of the characteristics of the SiNx:H/Si interface has been undertaken by capacitance-voltage measurements and surface photovoltage spectroscopy. By each of these techniques, we have determined the distribution of the...
LA  - eng
M2  - 534
PB  - Iop Publishing Ltd
KW  - Chemical-Vapor-Deposition
KW  - Insulator-Semiconductor Sctructures
KW  - Resonance Plasma Method
KW  - Cyclotron-Resonance
KW  - H Films
KW  - Gate Dielectrics
KW  - Silicon Nitrides
KW  - State Density
KW  - Temperature
KW  - Oxide.
TI  - Electrical properties of rapid thermally annealed SiNx : H/Si structures characterized by capacitance-voltage and surface photovoltage spectroscopy
TY  - journal article
VL  - 16
ER  -