%0 Journal Article
%A Alonso Orts, Manuel
%A Nogales Díaz, Emilio
%A Méndez Martín, María Bianchi
%A Rigby, Oliver M.
%A Stamp, Alice V.
%A Hindmarsh, Steve A.
%A Sánchez, Ana M.
%T Direct observation of tunnelled intergrowth in SnO2/Ga2O3 complex nanowires
%D 2019
%@ 0957-4484
%U https://hdl.handle.net/20.500.14352/12999
%X beta-Ga_2O_3 intergrowths have been revealed in the SnO_2 rutile structure when SnO_2/Ga_2O_3 complex nanostructures are grown by thermal evaporation with a catalyst-free basis method. The structure is formed by a Ga_2O_3 nanowire trunk, around which a rutile SnO_2 particle is formed with [001] aligned to the [010] Ga_2O_3 trunk axis. Inside the SnO_2 particle, beta-Ga_2O_3 units occur separated periodically by hexagonal tunnels in the (210) rutile plane. Orange (620 nm) optical emission from tin oxide, with a narrow linewidth indicating localised electronic states, may be associated with this beta-Ga_2O_3 intergrowth.
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