RT Journal Article
T1 Direct observation of tunnelled intergrowth in SnO2/Ga2O3 complex nanowires
A1 Alonso Orts, Manuel
A1 Nogales Díaz, Emilio
A1 Méndez Martín, María Bianchi
A1 Rigby, Oliver M.
A1 Stamp, Alice V.
A1 Hindmarsh, Steve A.
A1 Sánchez, Ana M.
AB beta-Ga_2O_3 intergrowths have been revealed in the SnO_2 rutile structure when SnO_2/Ga_2O_3 complex nanostructures are grown by thermal evaporation with a catalyst-free basis method. The structure is formed by a Ga_2O_3 nanowire trunk, around which a rutile SnO_2 particle is formed with [001] aligned to the [010] Ga_2O_3 trunk axis. Inside the SnO_2 particle, beta-Ga_2O_3 units occur separated periodically by hexagonal tunnels in the (210) rutile plane. Orange (620 nm) optical emission from tin oxide, with a narrow linewidth indicating localised electronic states, may be associated with this beta-Ga_2O_3 intergrowth.
PB IOP Publishing
SN 0957-4484
YR 2019
FD 2019-02-01
LK https://hdl.handle.net/20.500.14352/12999
UL https://hdl.handle.net/20.500.14352/12999
LA eng
NO © 2019 IOP PublishingWe thank JJP Peters for his input on the multislice ADF simulation. This work has been supported by MINECO projects MAT-2015-65274-R/FEDER and M-ERANET PCIN-2017-106. MA-O acknowledges financial support from MECD (FPU contract).
NO Ministerio de Economía y Competitividad (MINECO)
NO Ministerio de Educación, Cultura y Deporte (MECD)
DS Docta Complutense
RD 13 abr 2025