RT Journal Article
T1 Assessment of InGaSb crystals by cathodo-luminescence microscopy and spectroscopy
A1 Chioncel, M. F.
A1 Díaz-Guerra Viejo, Carlos
A1 Piqueras de Noriega, Javier
A1 Duhanian, N.
A1 Duffar, T.
AB Low band-gap InGaSb crystals are of interest for the development of thermo-photo-voltaic (TPV) cells and other devices operating in the infrared spectral range. In this work, cathodoluminescence (CL) in the scanning electron microscope (SEM) has been applied to study the homogeneity of InGaSb material grown by the vertical Bridgman technique with regard to effective incorporation of In to the ternary alloy and the nature and distribution of defects influencing the luminescence properties of this semiconductor. Back-scattered electron imaging and wavelength dispersive X-ray mapping were used as complementary techniques to CL for analysis of chemical composition and element distribution. The results show that local CL spectra provide information on the effective formation of the alloy, not revealed by other techniques.
PB Natl Inst Optoelectronics
SN 1454-4164
YR 2004
FD 2004-03
LK https://hdl.handle.net/20.500.14352/51147
UL https://hdl.handle.net/20.500.14352/51147
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NO © Natl Inst Optoelectronics.This work was carried out in the frame of the Fifth Framework European Programme for research; HPRN-CT 2001-00199 project. MFC acknowledges European Commission for financial support.
NO Fifth Framework European Programme for research
NO European Commission
DS Docta Complutense
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