%0 Journal Article
%A Miranda Pantoja, José Miguel
%A Sebastián Franco, José Luis
%T Microwave noise measurements on Al0.3Ga0.7As/GaAs channels grown by molecular beam epitaxy using As-2 and As-4
%D 1998
%@ 0268-1242
%U https://hdl.handle.net/20.500.14352/58952
%X We present microwave noise measurements performed on different high electron mobility transistor channels under both darkness and illumination. Two structures of Alo(0.3)Gao(0.7)As/GaAs layers have been grown with beams of Asp and As-4 using molecular beam epitaxy. The measured room temperature, Hall mobilities and sheet carrier densities have demonstrated in both cases a good de performance of the channels. However, the measurement of the noise temperature at 1.5 GHz has shown the sample grown with As-4 to be considerably noisier than the one grown with AS(4).
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