RT Journal Article
T1 Microwave noise measurements on Al0.3Ga0.7As/GaAs channels grown by molecular beam epitaxy using As-2 and As-4
A1 Miranda Pantoja, José Miguel
A1 Sebastián Franco, José Luis
AB We present microwave noise measurements performed on different high electron mobility transistor channels under both darkness and illumination. Two structures of Alo(0.3)Gao(0.7)As/GaAs layers have been grown with beams of Asp and As-4 using molecular beam epitaxy. The measured room temperature, Hall mobilities and sheet carrier densities have demonstrated in both cases a good de performance of the channels. However, the measurement of the noise temperature at 1.5 GHz has shown the sample grown with As-4 to be considerably noisier than the one grown with AS(4).
PB Iop Publishing Ltd
SN 0268-1242
YR 1998
FD 1998-07
LK https://hdl.handle.net/20.500.14352/58952
UL https://hdl.handle.net/20.500.14352/58952
LA eng
NO © 1998 IOP Publishing Ltd. This work was funded by the European Union Commission under the TMR program ERBFMRXCT960050. The MBE system and the technological work were supported by the Deutsche Forschungsgemeinschaft (SFB 241-IMES) and by the European Union within the Copernicus programme, project COP 94/01180. Thanks are due to MichaelBrandt and Chih-I Lin for their helpful comments.
NO European Union Commission under the TMR program
NO Deutsche Forschungsgemeinschaft
NO European Union within the Copernicus programme
DS Docta Complutense
RD 9 abr 2025