%0 Journal Article
%A Martil De La Plaza, Ignacio
%A González Díaz, Germán
%T N-2 remote plasma cleaning of InP to improve SiNx : H/InP interface performance
%J Workshop on Dielectrics in Microelectronics
%D 2000
%@ 0026-2714
%U https://hdl.handle.net/20.500.14352/59236
%X Cleaning of InP surfaces using electron cyclotron resonance (ECR) nitrogen plasmas has been studied. Electrical performance of Al/SiNx:H/InP structures has been analysed to determine the effect of the plasma cleaning. The SINx:H insulator layers are deposited at 200 degrees C using an ECR chemical vapour deposition technique. It is observed that a 30 s low-power (60 W) ECR N-2 plasma treatment of InP surface reduces the interface defects and improves the resistivity and breakdown held values of the SiNx:H. (C) 2000 Elsevier Science Ltd. All rights reserved.
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