RT Journal Article
T1 N-2 remote plasma cleaning of InP to improve SiNx : H/InP interface performance
A1 Martil De La Plaza, Ignacio
A1 González Díaz, Germán
AB Cleaning of InP surfaces using electron cyclotron resonance (ECR) nitrogen plasmas has been studied. Electrical performance of Al/SiNx:H/InP structures has been analysed to determine the effect of the plasma cleaning. The SINx:H insulator layers are deposited at 200 degrees C using an ECR chemical vapour deposition technique. It is observed that a 30 s low-power (60 W) ECR N-2 plasma treatment of InP surface reduces the interface defects and improves the resistivity and breakdown held values of the SiNx:H. (C) 2000 Elsevier Science Ltd. All rights reserved.
PB Pergamon-Elsevier Science Ltd.
SN 0026-2714
YR 2000
FD 2000-04
LK https://hdl.handle.net/20.500.14352/59236
UL https://hdl.handle.net/20.500.14352/59236
LA eng
NO Workshop on Dielectrics in Microelectronics (10. 1999. Barcelona). © Elsevier Science Ltd. The authors would like to thank CAI de Implantación Iónica from the Complutense University in Madrid for technical assistance with the ECR-CVD system. This research was partially supported by the Spanish government under Grant no. TIC 98/0740.
NO Spanish government
DS Docta Complutense
RD 18 abr 2025