%0 Journal Article
%A Martil De La Plaza, Ignacio
%A González Díaz, Germán
%A Olea Ariza, Javier
%T Lifetime recovery in ultrahighly titanium-doped silicon for the implementation of an intermediate band material
%D 2009
%@ 0003-6951
%U https://hdl.handle.net/20.500.14352/44248
%X The doping of conventional semiconductors with deep level (DL) centers has been proposed to synthesize intermediate band materials. A recent fundamental study of the nonradiative recombination (NRR) mechanisms predicts the suppression of the NRR for ultrahigh DL dilutions as a result of the delocalization of the impurity electron wave functions. Carrier lifetime measurements on Si wafers doped with Ti in the 10(20)-10(21) cm(-3) concentration range show an increase in the lifetime, in agreement with the NRR suppression predicted and contrary to the classic understanding of DL action.
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