RT Journal Article
T1 Lifetime recovery in ultrahighly titanium-doped silicon for the implementation of an intermediate band material
A1 Martil De La Plaza, Ignacio
A1 González Díaz, Germán
A1 Olea Ariza, Javier
AB The doping of conventional semiconductors with deep level (DL) centers has been proposed to synthesize intermediate band materials. A recent fundamental study of the nonradiative recombination (NRR) mechanisms predicts the suppression of the NRR for ultrahigh DL dilutions as a result of the delocalization of the impurity electron wave functions. Carrier lifetime measurements on Si wafers doped with Ti in the 10(20)-10(21) cm(-3) concentration range show an increase in the lifetime, in agreement with the NRR suppression predicted and contrary to the classic understanding of DL action.
PB Amer Inst Physics
SN 0003-6951
YR 2009
FD 2009-01-26
LK https://hdl.handle.net/20.500.14352/44248
UL https://hdl.handle.net/20.500.14352/44248
LA eng
NO © 2009 American Institute of Physics. This work has been supported by the project FULL SPECTRUM (Grant No. SES6-CT-2003-502620) funded by the European Commission, by the Regional Government of Madrid within the project NUMANCIA (Grant No. S-0505/ENE/000310), and by the Spanish National Research Program within the project GENESIS-FV  (Grant No. CSD2006-0004).
NO FULL SPECTRUM funded by the European Commission
NO Regional Government of Madrid
NO Spanish National Research Program
DS Docta Complutense
RD 8 abr 2025