TY  - JOUR
AU  - Mártil de la Plaza, Ignacio
AU  - González Díaz, Germán
AU  - Olea Ariza, Javier
PY  - 2009
DO  - 10.1063/1.3077202
SN  - 0003-6951
UR  - https://hdl.handle.net/20.500.14352/44248
T2  - Applied physics Letters
AB  - The doping of conventional semiconductors with deep level (DL) centers has been proposed to synthesize intermediate band materials. A recent fundamental study of the nonradiative recombination (NRR) mechanisms predicts the suppression of the NRR for...
LA  - eng
PB  - Amer Inst Physics
KW  - Solar-Cells
KW  - Recombination
KW  - Diffusion.
TI  - Lifetime recovery in ultrahighly titanium-doped silicon for the implementation of an intermediate band material
TY  - journal article
VL  - 94
ER  -