RT Journal Article
T1 Physical properties of high pressure reactively sputtered TiO2
A1 Martil De La Plaza, Ignacio
A1 González Díaz, Germán
A1 Prado Millán, Álvaro Del
A1 San Andrés Serrano, Enrique
AB We present a study of the physical properties of TiO2 thin films deposited at 200 degrees C on Si by high pressure reactive sputtering, a nonconventional deposition method. Just after deposition, the TiO2 films were in situ annealed in the deposition chamber at temperatures between 600 and 900 degrees C in O-2 atmosphere. Morphological, compositional, structural and electrical characterization of the samples was performed by means of several techniques, including transmission electron microscopy, heavy-ion elastic recoil detection analysis, infrared spectroscopy, x-ray and electron diffraction and capacitance-voltage measurements. Microscopy images show that the TiO2 films are polycrystalline, and that a SiO2 film spontaneously grows at the TiO2/Si interface. The unannealed TiO2 films are oxygen rich, as shown by compositional measurements. By annealing this oxygen excess is released. For temperatures above 600 degrees C the TiO2 films are stoichiometric. Infrared spectroscopy and diffraction measurements show that as-deposited films are a mixture of anatase and rutile grains. During annealing there is a phase transformation, and at 900 degrees C the anatase phase disappears and only the rutile phase is found. The relative dielectric permittivity of the TiO2 film is calculated from capacitance-voltage measurements, and very high. values in the 88-102 range are obtained.
PB AVS Amer. Inst. Physics
SN 0734-2101
YR 2005
FD 2005-11
LK https://hdl.handle.net/20.500.14352/51114
UL https://hdl.handle.net/20.500.14352/51114
NO © 2005 American Vacuum Society.  The authors acknowledge C.A.I. de Implantación Iónica (U.C.M.) for technical support, C.A.I. de espectroscopía for FTIR measurements and C.A.I. de difracción de rayos X for x-ray characterization. This work was partially supported by the Spanish M.E.C., under Contract Nos. T.I.C. 01-1253 and TEC 2004-1237/MIC.
DS Docta Complutense
RD 8 abr 2025