TY  - JOUR
AU  - Martil De La Plaza, Ignacio
AU  - González Díaz, Germán
AU  - Prado Millán, Álvaro Del
AU  - San Andrés Serrano, Enrique
PY  - 2005
DO  - 10.1116/1.2056554
SN  - 0734-2101
UR  - https://hdl.handle.net/20.500.14352/51114
T2  - Journal of Vaccum Scuebce & Technology A
AB  - We present a study of the physical properties of TiO2 thin films deposited at 200 degrees C on Si by high pressure reactive sputtering, a nonconventional deposition method. Just after deposition, the TiO2 films were in situ annealed in the deposition...
M2  - 1523
PB  - AVS Amer. Inst. Physics
KW  - Thin-Films
KW  - Transport-Properties
KW  - Optical-Properties
KW  - Interfacial Layer
KW  - Gate Insulators
KW  - He+ Irradiation
KW  - Silicon
KW  - Plasma
KW  - Titanium
KW  - Deposition.
TI  - Physical properties of high pressure reactively sputtered TiO2
TY  - journal article
VL  - 23
ER  -