%0 Journal Article
%A Olea Ariza, Javier
%A González Díaz, Germán
%A Pastor Pastor, David
%A García Hemme, Eric
%A Caudevilla Gutiérrez, Daniel
%A Algaidy, Sari
%A Pérez Zenteno, Francisco José
%A Duarte Cano, Sebastián
%A García Hernansanz, Rodrigo
%A Prado Millán, Álvaro Del
%A San Andrés Serrano, Enrique
%A Martil De La Plaza, Ignacio
%A Lee, Yao-Jen
%A Hong, Tzu-Chieh
%A Chao, Tien-Sheng
%T Ti supersaturated Si by microwave annealing processes
%D 2023
%@ 0268-1242
%U https://hdl.handle.net/20.500.14352/88805
%X Microwave annealing (MWA) processes were used for the first time to obtain Ti supersaturated Si. High Ti doses were ion implanted on Si substrates and subsequently MWA processed to recrystallize the amorphous layer. The resulting layers were monocrystalline with a high density of defects. Ti depth profiles indicate that diffusion is avoided once recrystallization is produced. Finally, the electronic transport properties measurements point to a decoupling effect between the Si:Ti layer and the substrate. The implanted layer present also a shallow donor and very high Hall mobility.
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