RT Journal Article
T1 Ti supersaturated Si by microwave annealing processes
A1 Olea Ariza, Javier
A1 González Díaz, Germán
A1 Pastor Pastor, David
A1 García Hemme, Eric
A1 Caudevilla Gutiérrez, Daniel
A1 Algaidy, Sari
A1 Pérez Zenteno, Francisco José
A1 Duarte Cano, Sebastián
A1 García Hernansanz, Rodrigo
A1 Prado Millán, Álvaro Del
A1 San Andrés Serrano, Enrique
A1 Martil De La Plaza, Ignacio
A1 Lee, Yao-Jen
A1 Hong, Tzu-Chieh
A1 Chao, Tien-Sheng
AB Microwave annealing (MWA) processes were used for the first time to obtain Ti supersaturated Si. High Ti doses were ion implanted on Si substrates and subsequently MWA processed to recrystallize the amorphous layer. The resulting layers were monocrystalline with a high density of defects. Ti depth profiles indicate that diffusion is avoided once recrystallization is produced. Finally, the electronic transport properties measurements point to a decoupling effect between the Si:Ti layer and the substrate. The implanted layer present also a shallow donor and very high Hall mobility.
PB IOP Publishing
SN 0268-1242
YR 2023
FD 2023
LK https://hdl.handle.net/20.500.14352/88805
UL https://hdl.handle.net/20.500.14352/88805
LA eng
NO J. Olea, G. González-Díaz, D. Pastor, E. García-Hemme, D. Caudevilla, S. Algaidy, F. Pérez-Zenteno, S. Duarte-Cano, R. García-Hernansanz, A. Del Prado, E. S. Andrés, I. Mártil, Y.-J. Lee, T.-C. Hong, and T.-S. Chao, Semicond. Sci. Technol. 38, 024004 (2023).
NO Universidad Complutense de Madrid
NO European Commssion
NO Ministerio de Ciencia, Innovación y Universidades (España)
NO Ministry of Education (Arabia Saudita)
NO Consejo Nacional de Humanidades, Ciencias y Tecnologías (México)
DS Docta Complutense
RD 6 abr 2025