TY  - JOUR
AU  - Redondo, E.
AU  - Martil De La Plaza, Ignacio
AU  - González Díaz, Germán
AU  - Fernández Sánchez, Paloma
AU  - Cimas Cuevas, María Rosa
PY  - 2002
DO  - 10.1088/0268-1242/17/7/306
SN  - 0268-1242
UR  - https://hdl.handle.net/20.500.14352/59103
T2  - Semiconductor Science and Technology
AB  - In this paper we report on the optimization of the SiNchi:H insulator, deposited by the electron cyclotron resonance (ECR) plasma method, as a dielectric for metal-insulator-semiconductor (MIS) structures built on an InP compound semiconductor. Two...
LA  - eng
M2  - 672
PB  - Iop Publishing Ltd
KW  - Level Transient Spectroscopy
KW  - Chemical-Vapor-Deposition
KW  - Electrical-Properties
KW  - Devices
KW  - InP.
TI  - Improvement of SiNx : H/InP gate structures for the fabrication of metal-insulator-semiconductor field-effect transistors
TY  - journal article
VL  - 17
ER  -