%0 Journal Article
%A González Díaz, Germán
%A Martín, J.M.
%A Artús, L.
%A Cuscó, R.
%A Ibañez, J.
%T Raman-scattering criteria for characterization of anneal-restored zinc blende single crystals: Application to Si+-implanted InP
%D 1997
%@ 0021-8979
%U https://hdl.handle.net/20.500.14352/59345
%X We have studied the lattice recovery by rapid thermal annealing of Si+-implanted InP using Raman spectroscopy. The crystallinity recovery for different annealing temperatures of samples totally amorphized by the implantation can be monitored by means of their Raman spectra. However, free-charge coupling with the LO mode and possible misorientation of the recrystallized material may alter substantially the first-order Raman spectrum, making it unreliable for a good characterization of the lattice recovery. The study of second-order Raman spectrum overcomes the problems present in the analysis of first-order Raman spectrum and provides suitable criteria to assess the recrystallization of the implanted and annealed samples. After rapid thermal annealing at 875 degrees C for 10 s, the intensity of the second-order peaks approaches 70% of its value in virgin InP, and third-order Raman peaks are also clearly detected, evidencing the good lattice recovery achieved.
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