RT Journal Article
T1 Raman-scattering criteria for characterization of anneal-restored zinc blende single crystals: Application to Si+-implanted InP
A1 González Díaz, Germán
A1 Martín, J.M.
A1 Artús, L.
A1 Cuscó, R.
A1 Ibañez, J.
AB We have studied the lattice recovery by rapid thermal annealing of Si+-implanted InP using Raman spectroscopy. The crystallinity recovery for different annealing temperatures of samples totally amorphized by the implantation can be monitored by means of their Raman spectra. However, free-charge coupling with the LO mode and possible misorientation of the recrystallized material may alter substantially the first-order Raman spectrum, making it unreliable for a good characterization of the lattice recovery. The study of second-order Raman spectrum overcomes the problems present in the analysis of first-order Raman spectrum and provides suitable criteria to assess the recrystallization of the implanted and annealed samples. After rapid thermal annealing at 875 degrees C for 10 s, the intensity of the second-order peaks approaches 70% of its value in virgin InP, and third-order Raman peaks are also clearly detected, evidencing the good lattice recovery achieved.
PB American Institute of Physics
SN 0021-8979
YR 1997
FD 1997-10-15
LK https://hdl.handle.net/20.500.14352/59345
UL https://hdl.handle.net/20.500.14352/59345
LA eng
NO © American Institute of Physics. The authors gratefully acknowledge the Spanish Ministerio de Educación y Ciencia for financial support.
NO Spanish Ministerio de Educación y Ciencia
DS Docta Complutense
RD 17 abr 2025