TY  - JOUR
AU  - González Díaz, Germán
AU  - Martín, J.M.
AU  - Artús, L.
AU  - Cuscó, R.
AU  - Ibañez, J.
PY  - 1997
DO  - 10.1063/1.365753
SN  - 0021-8979
UR  - https://hdl.handle.net/20.500.14352/59345
T2  - Journal of Applied Physics
AB  - We have studied the lattice recovery by rapid thermal annealing of Si+-implanted InP using Raman spectroscopy. The crystallinity recovery for different annealing temperatures of samples totally amorphized by the implantation can be monitored by means...
LA  - eng
M2  - 3736
PB  - American Institute of Physics
KW  - Ion-Implantation
KW  - GaAs
KW  - Damage
KW  - Silicon.
TI  - Raman-scattering criteria for characterization of anneal-restored zinc blende single crystals: Application to Si+-implanted InP
TY  - journal article
VL  - 82
ER  -