TY  - JOUR
AU  - San Andrés Serrano, Enrique
PY  - 2015
DO  - 10.1021/am5075248
SN  - 1944-8244
UR  - https://hdl.handle.net/20.500.14352/34692
T2  - ACS applied materials & interfaces
AB  - We present the epitaxial growth of Ge and Ge_(0.94)Sn_(0.06) layers with 1.4% and 0.4% tensile strain, respectively, by reduced pressure chemical vapor deposition on relaxed GeSn buffers and the formation of high-k/metal gate stacks thereon. Annealing...
LA  - eng
M2  - 62
PB  - Amer Chemical Soc.
KW  - Interface-trap density
KW  - Numerical-simulation
KW  - Germanium
KW  - Ge_(1-x)Sn_(x).
TI  - High-k gate stacks on low bandgap tensile strained Ge and GeSn alloys for field-effect transistors
TY  - journal article
VL  - 7
ER  -