RT Journal Article
T1 SEU Characterization of Three Successive Generations of COTS SRAMs at Ultralow Bias Voltage to 14.2 MeV Neutrons
A1 Clemente Barreira, Juan Antonio
A1 Hubert, Guilaume
A1 Fraire, Juan
A1 Franco Peláez, Francisco Javier
A1 Villa, Francesca
A1 Rey, Solenne
A1 Baylac, Maud
A1 Puchner, Helmut
A1 Mecha, Hortensia
A1 Velazco, Raoul
AB This paper presents a SEU sensitivity characterization at ultra-low bias voltage of three generations of COTS SRAMs manufactured in 130 nm, 90 nm and 65 nm CMOS processes. For this purpose, radiation tests with 14.2 MeV neutrons were performed for SRAM power supplies ranging from 0.5 V to 3.15 V. The experimental results yielded clear evidences of the SEU sensitivity increase at very low bias voltages. These results have been cross-checked with predictions issued from the modeling tool MUlti-SCAles Single Event Phenomena Predictive Platform (MUSCA-SEP3). Large-scale SELs and SEFIs, observed in the 90-nm and 130-nm SRAMs respectively, are also presented and discussed.
PB IEEE-Inst Electrical Electronics Engineers Inc
SN 0018-9499
YR 2018
FD 2018-02-01
LK https://hdl.handle.net/20.500.14352/11974
UL https://hdl.handle.net/20.500.14352/11974
LA spa
NO “© © 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.”
NO MINECO
NO Universidad Complutense de Madrid
DS Docta Complutense
RD 2 may 2024