TY  - JOUR
AU  - Clemente Barreira, Juan Antonio
AU  - Hubert, Guilaume
AU  - Fraire, Juan
AU  - Franco Peláez, Francisco Javier
AU  - Villa, Francesca
AU  - Rey, Solenne
AU  - Baylac, Maud
AU  - Puchner, Helmut
AU  - Mecha, Hortensia
AU  - Velazco, Raoul
PY  - 2018
DO  - 10.1109/TNS.2018.2800905
SN  - 0018-9499
UR  - https://hdl.handle.net/20.500.14352/11974
T2  - IEEE transactions on nuclear science
AB  - This paper presents a SEU sensitivity characterization at ultra-low bias voltage of three generations of COTS SRAMs manufactured in 130 nm, 90 nm and 65 nm CMOS processes. For this purpose, radiation tests with 14.2 MeV neutrons were performed for...
LA  - spa
M2  - 1
PB  - IEEE-Inst Electrical Electronics Engineers Inc
KW  - COTS
KW  - SRAM
KW  - neutron tests
KW  - radiation hard- ness
KW  - reliability
KW  - soft error
KW  - low-bias voltage
TI  - SEU Characterization of Three Successive Generations of COTS SRAMs at Ultralow Bias Voltage to 14.2 MeV Neutrons
TY  - journal article
ER  -