RT Journal Article
T1 Sensitivity Characterization of a COTS 90-nm SRAM at Ultra Low Bias Voltage
A1 Clemente Barreira, Juan Antonio
A1 Hubert, Guillaume
A1 Franco Peláez, Francisco Javier
A1 Vila, Francesca
A1 Baylac, Maud
A1 Puchner, Helmut
A1 Velazco, Raoul
A1 Mecha López, Hortensia
AB This paper presents the characterization of the sensitivity to 14-MeV neutrons of a Commercial Off-The-Shelf (COTS) 90-nm Static Random Access Memories (SRAMs) manufactured by Cypress Semiconductor, when biased at ultra low voltage. Firstly, experiments exposing this memory at 14-MeV neutrons, when powering it up at bias voltages ranging from 0.5V to 3.3V, are presented and discussed. These results are in good concordance with theoretical predictions issued by the modeling tool MUSCA-SEP 3 (MUlti-SCAles Single Event Phenomena Predictive Platform). Then, this tool has been used to obtain Soft Error Rate (SER) predictions at different altitudes above the Earth’s surface of this device vs. its bias voltage. Finally, the effect of contamination by α articles has also been estimated at said range of bias Voltages.
PB IEEE-Inst Electrical Electronics Engineers Inc
SN 0018-9499
YR 2017
FD 2017-08-01
LK https://hdl.handle.net/20.500.14352/17699
UL https://hdl.handle.net/20.500.14352/17699
LA eng
NO Ministerio de Ciencia e Innovación (MICINN)
NO Becas José Castillejo
DS Docta Complutense
RD 18 abr 2025