TY  - JOUR
AU  - Clemente Barreira, Juan Antonio
AU  - Hubert, Guillaume
AU  - Franco Peláez, Francisco Javier
AU  - Vila, Francesca
AU  - Baylac, Maud
AU  - Puchner, Helmut
AU  - Velazco, Raoul
AU  - Mecha López, Hortensia
PY  - 2017
DO  - 10.1109/TNS.2017.2682984
SN  - 0018-9499
UR  - https://hdl.handle.net/20.500.14352/17699
T2  - IEEE transactions on nuclear science
AB  - This paper presents the characterization of the sensitivity to 14-MeV neutrons of a Commercial Off-The-Shelf (COTS) 90-nm Static Random Access Memories (SRAMs) manufactured by Cypress Semiconductor, when biased at ultra low voltage. Firstly,...
LA  - eng
M2  - 2188
PB  - IEEE-Inst Electrical Electronics Engineers Inc
KW  - Neutrons
KW  - Random access memory
KW  - Sensitivity
KW  - Power supplies
KW  - Electronic mail
KW  - Predictive models
KW  - Contamination
KW  - Low-bias voltage
KW  - COTS
KW  - SRAM
KW  - Neutron tests
KW  - Radiation hardness
KW  - Reliability
KW  - Soft error
TI  - Sensitivity Characterization of a COTS 90-nm SRAM at Ultra Low Bias Voltage
TY  - journal article
VL  - 64
ER  -