RT Journal Article
T1 CL study of blue and UV emissions in ß-Ga_2O_3 nanowires grown by thermal evaporation of GaN
A1 Guzmán Navarro, G
A1 Herrera Zaldivar, M.
A1 Valenzuela Benavides, J.
A1 Maestre Varea, David
AB We report a cathodoluminescence (CL) study of ß-Ga_2O_3 nanowires grown by thermal evaporation of GaN on Si(100) and Au/Si(00) substrates. Condensation and subsequent oxidation of metallic Ga is suggested as the growth mechanism of ß-Ga_2O_3 nanowires. The ß-Ga_2O_3 nanowires grown on Si(100) show multiple bends or undulations, together with a strong UV emission at 3.31 eV and a weak blue emission centered at 2.8 eV as a band component. The ß-Ga_2O_3 nanowires grown on Au/Si(100) substrates recorded a lower CL intensity of a well-defined blue emission of 2.8 eV. A thermal treatment on these samples produced an increase of the UV emission and quenching of the blue band. Thermal annealing of oxygen vacancies is proposed as the responsible mechanism for the observed behavior of these samples.
PB American Institute of Physics
SN 0021-8979
YR 2011
FD 2011-07-01
LK https://hdl.handle.net/20.500.14352/42746
UL https://hdl.handle.net/20.500.14352/42746
LA eng
NO ©2011 American Institute of PhysicsThis work was partially supported by grants from CONACyT (Grant No. 102519) and PAPIIT-UNAM (Grant No. IN102111), Mexico. Technical help from E. Aparicio, E. Flores, F. Ruiz, A. Tiznado, I. Gradilla, D. Domínguez, and L. Gradilla is greatly  appreciated.
NO CONACyT
NO PAPIIT-UNAM
DS Docta Complutense
RD 11 may 2025