RT Journal Article T1 Electron beam induced current and scanning tunnelling spectroscopy correlative study of Cd-xHg_(1-x)Te and CdTe crystals A1 Panin, G. N. A1 Díaz-Guerra Viejo, Carlos A1 Piqueras de Noriega, Javier AB A combined scanning electron microscope-scanning tunnelling microscope (SEM-STM) system has been used to characterize CdxHg1-xTe and CdTe crystals, The electron beam induced current (EBIC) mode of the SEM shows the existence of inhomogeneities in the electronic behaviour of the samples, mainly related to the presence of subgrain boundaries and precipitates. Current imaging tunnelling spectroscopy images and the related normalized differential conductance curves, obtained with the STM, reveal the electronic inhomogeneities at a finer scale. In particular, local variations of the band gap were shown by the conductance curves in regions with strong EBIC contrast. SEM-and STM-based techniques in a combined instrument appear to be complementary characterization techniques. PB Iop Publishing Ltd SN 0268-1242 YR 1998 FD 1998-06 LK https://hdl.handle.net/20.500.14352/59141 UL https://hdl.handle.net/20.500.14352/59141 LA eng NO [1] Panin G N and Yakimov E 1992 Semicond. Sci. Technol. A 7 150[2] Pal U, Fernández P, Piqueras J, Sochinskii N V and Dieguez E 1995 J. Appl. Phys. 78 1992[3] Panin G N, Fernández P and Piqueras J 1996 Semicond. Sci. Technol. 11 1354[4] Castaldini A, Cavallini A, Fraboni B, Polenta L, Fernández P and Piqueras J 1996 Phys. Rev. B 54 7622[5] Seehofer L, Falkenberg G, Johnson R L, Etgens V H, Tatarenko S, Brun D and Daudin B 1995 Appl. Phys. Lett. 67 1680[6] Seehofer L, Etgens V H, Falkenberg G, Veron M B, Brun D, Daudin B, Tatarenko S and Johnson R L 1996 Surf. Sci. 347 L55[7] Castro-Rodríguez R, Zapata-Torres M, Zapata-Navarro A, Oliva A I and Pe˜na J L 1996 J. Appl. Phys. 79 184[8] Feenstra R M 1994 Surf. Sci. 299–300 965[9] Hamers R J, Tromp R M and Demuth J E 1986 Phys. Rev. Lett. 56 1972[10] First P N, Stroscio J A, Dragoset R A, Pierce P T and Celotta R J 1989 Phys. Rev. Lett. 63 1416[11] Asenjo A, Gómez-Rodríguez J M and Baró A M 1992 Ultramicroscopy 42–44 933[12] TanimotoMand Nakano Y 1990 J. Vac. Sci. Technol. A 8 553[13] Asenjo A, Buendía A, Gómez-Rodríguez J M and Baró A M 1994 J. Vac. Sci. Technol. B 12 1658[14] Holt D B, Raza B and Wojcik A 1996 Mater. Sci. Eng. B 42 14[15] Stroscio J A, Feenstra R M and Fein A P 1986 Phys. Rev. Lett. 57 2579[16] Lang N D 1986 Phys. Rev. B 34 5947[17] Feenstra R M, Stroscio J A and Fein A P 1987 Surf. Sci. 181 295[18] Wasenczuk A, Willoughby A F W, Mackett P, O’Keefe E, Capper P and Maxey C D 1996 J. Cryst. Growth 159 1090[19] Darchuk S D, Panin G N, Plyatsko S V, Sizov F F and Yakimov E B 1990 J. Phys. Chem. Solids 51 1333[20] Panin G N and Yakimov E B 1991 J. Phys. IV, Colloq. C 6 C6–181[21] Panin G N and Yakimov E B 1991 Microscopy of Semiconducting Materials 1991 (Inst. Phys. Conf. Ser. 117) ed A G Cullis and A R Long (Bristol: Institute of Physics) p 763[22] Blumtritt H, Panin G N, Yakimov E B and Heydenrich J 1988 Phys. Status Solidi A 109 K3[23] Wager J F and Rhiger D R 1985 J. Vac. Sci. Technol. A 3 212[24] Spicer W E, Silberman J A, Lindau I, Sher A and Wilson J A 1983 J. Vac. Sci. Technol. A 1 1735[25] Stroscio J A and Feenstra R M 1993 Methods Exp. Phys. 27 95[26] Edwards H, Derro D J, Barr A L, Markert T J and de Lozanne A L 1996 J. Vac. Sci. Technol. B 14 1217[27] Nemirovsky Y and Bahir G H 1989 J. Vac. Sci. Technol. A 7 206 582 NO © 1998 IOP Publishing Ltd.This work was supported by DGICYT (Project PB93-1256) and by CICYT (Project IN93-0012). The help of Professor A M Baró, Dr A Asenjo and Dr J G´omez-Herrero throughout this work is gratefully acknowledged. G N Panin thanks Spanish MEC for a research grant. NO DGICYT NO CICYT NO MEC DS Docta Complutense RD 29 abr 2024