TY  - JOUR
AU  - Franco Peláez, Francisco Javier
AU  - Clemente Barreira, Juan Antonio
AU  - Mecha López, Hortensia
AU  - Velazco, Raoul
PY  - 2019
DO  - 10.1109/TDMR.2018.2886358
SN  - 1530-4388
UR  - https://hdl.handle.net/20.500.14352/12942
T2  - IEEE Transactions on device and materials reliability
AB  - After having carried out radiation experiments on memories, the detected bitflips must be classified into single bit upsets and multiple events to calculate the cross sections of different phenomena. There are some accepted procedures to determine if...
LA  - eng
M2  - 104
PB  - IEEE
KW  - Birthday statistics
KW  - Multiple bit upset
KW  - Multiple cell upset
KW  - Radiation
KW  - Single bit upset
KW  - Single event upset
KW  - SRAMs
TI  - Influence of Randomness during the Interpretation of Results from Single-Event Experiments on SRAMs
TY  - journal article
VL  - 19
ER  -