TY  - JOUR
AU  - Castaldini, A.
AU  - Calvallini, A,.
AU  - Fraboni, B
AU  - Méndez Martín, María Bianchi
AU  - Piqueras De Noriega, Francisco Javier
PY  - 1994
DO  - 10.1063/1.357783
SN  - 0021-8979
UR  - https://hdl.handle.net/20.500.14352/58965
T2  - Journal of Applied Physics
AB  - The distribution in liquid-encapsulated-Czochralski (LEC) GaAs:Te wafers of point and complex defects has been investigated together with their influence on the minority-carrier diffusion length L. Three wafers with different Te-doping concentration...
LA  - eng
M2  - 987
PB  - Amer Inst Physics
KW  - Te Wafers
KW  - Cathodoluminescence
KW  - Defects
TI  - Spatial-distribution of recombination centers in gaaste - effects of the doping level
TY  - journal article
VL  - 76
ER  -