RT Journal Article
T1 Origin of the surface metallization in single-domain K/Si(100)2x1
A1 Segovia, P.
A1 Castro, G. R.
A1 Mascaraque Susunaga, Arantzazu
A1 Prieto, P.
A1 Kim, H. J.
A1 Michel, E. G.
AB The electronic structure and the metallization onset of single-domain K/Si(100)2x1 have been investigated with angle-resolved polarization-sensitive ultraviolet photoemission. The electronic states producing the surface metallization have been studied for increasing K coverages up to room-temperature saturation. As K coverage increases, the interface undergoes a transition at a critical coverage, from a low-coverage semiconducting phase, to a saturation-coverage metallic phase. Two different surface states (F-1 and F-2) have been detected in the vicinity of the Fermi level. These two states are sequentially filled along the metallization process. The coverage dependence of both F-1 and F-2, and their symmetry properties indicate that the metallization is due to the filling of an initially empty surface band (appearance of F-2) We relate F-1 to the completion of K chains in the single-domain surface. The changes detected in K 3p line shape correlate well with the modifications of the valence band, and support that the surface remains semiconducting up to the filling of F-2.
PB American Physical Society
SN 0163-1829
YR 1996
FD 1996-11-15
LK https://hdl.handle.net/20.500.14352/59426
UL https://hdl.handle.net/20.500.14352/59426
LA eng
NO © 1996 The American Physical Society.This work was financed by DGICYT (Spain) under Grants Nos. PB-94-1527 and SAB-950019P.
NO DGICYT (Spain)
DS Docta Complutense
RD 19 abr 2025