RT Journal Article
T1 Transport mechanisms in hyperdoped silicon solar cells
A1 García Hernansanz, Rodrigo
A1 Duarte Cano, Sebastián
A1 Pérez Zenteno, Francisco José
A1 Caudevilla Gutiérrez, Daniel
A1 García Hemme, Eric
A1 Algaidy, Sari
A1 Olea Ariza, Javier
A1 Pastor Pastor, David
A1 Prado Millán, Álvaro Del
A1 San Andrés Serrano, Enrique
A1 Martil De La Plaza, Ignacio
AB According to intermediate band (IB) theory, it is possible to increase the efficiency of a solar cell by boosting its ability to absorb low-energy photons. In this study, we used a hyperdoped semiconductor approach for this theory to create a proof of concept of different silicon-based IB solar cells. Preliminary results show an increase in the external quantum efficiency (EQE) in the silicon sub-bandgap region. This result points to sub-bandgap absorption in silicon having not only a direct application in solar cells but also in other areas such as infrared photodetectors. To establish the transport mechanisms in the hyperdoped semiconductors within a solar cell, we measured the J-V characteristic at different temperatures. We carried out the measurements in both dark and illuminated conditions. To explain the behavior of the measurements, we proposed a new model with three elements for the IB solar cell. This model is similar to the classic two-diodes solar cell model but it is necessary to include a new limiting current element in series with one of the diodes. The proposed model is also compatible with an impurity band formation within silicon bandgap. At high temperatures, the distance between the IB and the n-type amorphous silicon conduction band is close enough and both bands are contacted. As the temperature decreases, the distance between the bands increases and therefore this process becomes more limiting.
PB Iop Publishing Ltd
SN 0268-1242
YR 2022
FD 2022-12-01
LK https://hdl.handle.net/20.500.14352/72843
UL https://hdl.handle.net/20.500.14352/72843
LA eng
NO R. García-Hernansanz, S. Duarte-Cano, F. Pérez-Zenteno, D. Caudevilla, S. Algaidy, E. García-Hemme, J. Olea, D. Pastor, A. Del Prado, E. San Andrés, I. Mártil, E. Ros, J. Puigdollers, P. Ortega, and C. Voz, Semicond. Sci. Technol. 38, 124001 (2023).
NO Artículo firmado por 15 autores. © 2022 IOP Publishing Ltd. The authors would like to thank the Physical Sciences Research Assistance Centre (CAI de Técnicas Físicas) of the Complutense University of Madrid. This study was partially funded by Project MADRID-PV2 (P2018/EMT-4308), with aid from the Regional Government of Madrid and the ERDF, by the Spanish Ministry of Science and Innovation/National Research Agency (MCIN/AEI) under Grants TEC2017- 84378-R, PID2019-109215RB-C41, PID2020-116508RB-I00 and PID2020-117498RB-I00. Daniel Caudevilla would like to express his thanks for Grant PRE2018-083798, provided by the MICINN and the European Social Fund. Francisco Pérez Zenteno would also like to express his thanks for Grant 984933, provided by CONACyT (Mexico).
NO Comunidad de Madrid
NO European Commission
NO Ministerio de Ciencia, Innovación y Universidades (España)
NO Consejo Nacional de Ciencia y Tecnologίa (México)
DS Docta Complutense
RD 4 abr 2025