RT Journal Article
T1 Scavenging effect on plasma oxidized Gd2O3 grown by high pressure sputtering on Si and InP substrates
A1 Pampillón. María Ángela, 
A1 Feijoo. Pedro Carlos, 
A1 San Andrés Serrano, Enrique
A1 García. Héctor, 
A1 Castán. Helena, 
A1 Dueñas. Salvador, 
AB In this work, we analyze the scavenging effect of titanium gates on metal-insulator-semiconductor capacitors composed of gadolinium oxide as dielectric material deposited on Si and InP substrates. The Gd2O3 film was grown by high pressure sputtering from a metallic target followed by an in situ plasma oxidation. The thickness of the Ti film was varied between 2.5 and 17 nm and was capped with a Pt layer. For the devices grown on Si, a layer of 5 nm of Ti decreases the capacitance equivalent thickness from 2.3 to 1.9 nm without compromising the leakage current (10−4 A cm−2 at Vgate = 1 V). Thinner Ti has little impact on device performance, while 17 nm of Ti produces excessive scavenging. For InP capacitors, the scavenging effect is also observed with a decrease in the capacitance equivalent thickness from 2.5 to 1.9 nm (or an increase in the accumulation capacitance after the annealing from ∼1.4 to ∼1.7–1.8 μF cm−2). The leakage current density remains under 10−2 A cm−2 at Vgate = 1.5 V. For these devices, a severe flatband voltage shift with frequency is observed. This can be explained by a very high interface trap state density (in the order of 1013–1014 eV−1 cm−2).
PB IOP Science
SN 0268-1242
YR 2015
FD 2015-03-03
LK https://hdl.handle.net/20.500.14352/98142
UL https://hdl.handle.net/20.500.14352/98142
LA eng
NO Pampillón, M. A., et al. «Scavenging effect on plasma oxidized Gd 2 O 3 grown by high pressure sputtering on Si and InP substrates». Semiconductor Science and Technology, vol. 30, n.o 3, marzo de 2015, p. 035023. DOI.org (Crossref), https://doi.org/10.1088/0268-1242/30/3/035023.
NO Ministerio de Economía y Competitividad (España)
DS Docta Complutense
RD 10 abr 2025