TY  - JOUR
AU  - Pampillón. María Ángela
AU  - Feijoo. Pedro Carlos
AU  - San Andrés Serrano, Enrique
AU  - García. Héctor
AU  - Castán. Helena
AU  - Dueñas. Salvador
PY  - 2015
DO  - 10.1088/0268-1242/30/3/035023
SN  - 0268-1242
UR  - https://hdl.handle.net/20.500.14352/98142
T2  - Semiconductor Science and Technology
AB  - In this work, we analyze the scavenging effect of titanium gates on metal-insulator-semiconductor capacitors composed of gadolinium oxide as dielectric material deposited on Si and InP substrates. The Gd2O3 film was grown by high pressure sputtering...
LA  - eng
M2  - 035023-1
PB  - IOP Science
KW  - MIS devices
KW  - Scavenging effect
KW  - High-k dielectrics
KW  - InP substrate
KW  - High pressure sputtering
TI  - Scavenging effect on plasma oxidized Gd2O3 grown by high pressure sputtering on Si and InP substrates
TY  - journal article
VL  - 30
ER  -