RT Journal Article
T1 The influence of SiNx:H film properties on the electrical characteristics of metal-insulator-semiconductor devices
A1 Martil De La Plaza, Ignacio
A1 González Díaz, Germán
A1 García, S.
A1 Fernández, M.
AB SiNx:H thin films were deposited by the electron cyclotron resonance plasma method at low substrate temperature (200 degrees C) to fabricate metal-insulator-semiconductor devices. The effects of film properties on the electrical characteristics of two different devices, SiNx:H/Si and SiNx:H/InP, were analysed according to the C-V high-low frequency method. The results show that, in the devices based on Si, the presence of N-H bonds in the SiNx:H film increases the density of trapping centres at the insulator/semiconductor interface. This behaviour was analysed by the model recently proposed by Ying (1995 J. Vac. Sci. Technol. B 13 1613) for nitrided SiO2/Si interfaces. For the SiNx:H/InP capacitors, the electrical characteristics of the interface were strongly dependent on the SiNx:H composition. When the nitrogen to silicon ratio of the film was N/Si = 1.49, the minimum of the interface trap density was 2 x 10(12) cm(-2) eV(-1) This value was similar to the same data reported by other authors on devices where the InP surface was sulphur passivated. This suggests that nitrogen atoms of the insulator play some passivation role at the InP surface. The plasma exposure of the semiconductor surface during the deposition of the SiNx:H film promotes the formation of phosphorus vacancies at the InP surface. Nitrogen atoms may fill these vacancies and this gives rise to an insulator/semiconductor interface with few defects.
PB Iop Publishing Ltd
SN 0268-1242
YR 1997
FD 1997-12
LK https://hdl.handle.net/20.500.14352/59301
UL https://hdl.handle.net/20.500.14352/59301
LA eng
NO © IOP Publishing Ltd. The authors would like to thank E. Iborra for the facilities for the infrared characterization of films. This research was partially supported by the Spanish CYCIT under grant No TIC 93/0175.
NO Spanish  (CICYT)
DS Docta Complutense
RD 11 abr 2025