TY  - JOUR
AU  - Martil De La Plaza, Ignacio
AU  - González Díaz, Germán
AU  - García, S.
AU  - Fernández, M.
PY  - 1997
DO  - 10.1088/0268-1242/12/12/018
SN  - 0268-1242
UR  - https://hdl.handle.net/20.500.14352/59301
T2  - Semiconductor Science and Technology
AB  - SiNx:H thin films were deposited by the electron cyclotron resonance plasma method at low substrate temperature (200 degrees C) to fabricate metal-insulator-semiconductor devices. The effects of film properties on the electrical characteristics of two...
LA  - eng
M2  - 1650
PB  - Iop Publishing Ltd
KW  - Chemical-Vapor-Deposition
KW  - Silicon-Nitride
KW  - Plasma
KW  - Temperasture
KW  - Remote
KW  - Passivation
KW  - Interfaces.
TI  - The influence of SiNx:H film properties on the electrical characteristics of metal-insulator-semiconductor devices
TY  - journal article
VL  - 12
ER  -