RT Journal Article
T1 Understanding the nonlinear response of SiPMs
A1 Moya Zamanillo, Víctor
A1 Rosado Vélez, Jaime
AB A systematic study of the nonlinear response of Silicon Photomultipliers (SiPMs) was conducted through Monte Carlo (MC) simulations. The MC code was validated against experimental data for two different SiPMs. Nonlinearity mainly depends on the balance between the photon rate and the pixel recovery time. Additionally, nonlinearity has been found to depend on the light pulse shape, the correlated noise, the overvoltage dependence of the photon detection efficiency, and the impedance of the readout circuit. Correlated noise has been shown to have a minor impact on nonlinearity, but it can significantly affect the shape of the SiPM output current. Considering these dependencies and a previous statistical analysis of the nonlinear response of SiPMs, two phenomenological fitting models were proposed for exponential-like and finite light pulses, explaining the roles of their various terms and parameters. These models provide an accurate description of the nonlinear responses of SiPMs at the level of a few percentages for a wide range of situations.
PB MDPI
YR 2024
FD 2024-04-21
LK https://hdl.handle.net/20.500.14352/113928
UL https://hdl.handle.net/20.500.14352/113928
LA eng
NO Moya-Zamanillo, V.; Rosado, J. Understanding the Nonlinear Response of SiPMs. Sensors 2024, 24 (8), 2648. https://doi.org/10.3390/s24082648.
NO CT19/23-INVM-109
NO Ministerio de Ciencia e Innovación (España)
NO Agencia Estatal de Investigación (España)
NO European Commission
DS Docta Complutense
RD 15 dic 2025