%0 Journal Article
%A Méndez Martín, María Bianchi
%A Piqueras De Noriega, Francisco Javier
%A Cavallini, A.
%A Fraboni, B.
%T Study of defects in implanted GaAs - te by cathodoluminescence
%D 1994
%@ 0921-5107
%U https://hdl.handle.net/20.500.14352/58969
%X Evidence for IR cathodoluminescence (CL) at 1.2 and 1.0 eV in Te-doped GaAs in the temperature range 80-300 K has been obtained. The evolution of CL intensity and half-width of emission bands after silicon implantation and annealing has been investigated. The increase in the CL intensity with implantation dose after heat treatment supports the association of Si and/or Te with the radiation-induced Ga vacancies to form Si(Ga) or Te(Ga) defects.
%~