RT Journal Article
T1 Study of defects in implanted GaAs - te by cathodoluminescence
A1 Méndez Martín, María Bianchi
A1 Piqueras De Noriega, Francisco Javier
A1 Cavallini, A.
A1 Fraboni, B.
AB Evidence for IR cathodoluminescence (CL) at 1.2 and 1.0 eV in Te-doped GaAs in the temperature range 80-300 K has been obtained. The evolution of CL intensity and half-width of emission bands after silicon implantation and annealing has been investigated. The increase in the CL intensity with implantation dose after heat treatment supports the association of Si and/or Te with the radiation-induced Ga vacancies to form Si(Ga) or Te(Ga) defects.
PB Elsevier Science SA Lausanne
SN 0921-5107
YR 1994
FD 1994-05
LK https://hdl.handle.net/20.500.14352/58969
UL https://hdl.handle.net/20.500.14352/58969
NO © Elsevier Science SA Lausanne.International Workshop on Beam Injection Assessment of Defects in Semiconductors (BIADS 93) - A NATO Advanced Research Workshop (3. 1993. Bolonia, Italia)
DS Docta Complutense
RD 8 abr 2025