TY  - JOUR
AU  - Méndez Martín, María Bianchi
AU  - Piqueras De Noriega, Francisco Javier
AU  - Cavallini, A.
AU  - Fraboni, B.
PY  - 1994
DO  - 10.1016/0921-5107(94)90315-8
SN  - 0921-5107
UR  - https://hdl.handle.net/20.500.14352/58969
T2  - Materials Science and Engineering B-Solid State Materials for Advanced Technology
AB  - Evidence for IR cathodoluminescence (CL) at 1.2 and 1.0 eV in Te-doped GaAs in the temperature range 80-300 K has been obtained. The evolution of CL intensity and half-width of emission bands after silicon implantation and annealing has been...
M2  - 138
PB  - Elsevier Science SA Lausanne
KW  - Materials Science
KW  - Multidisciplinary
KW  - Physics
KW  - Condensed Matter
TI  - Study of defects in implanted GaAs - te by cathodoluminescence
TY  - journal article
VL  - 24
ER  -