RT Journal Article T1 Synthesis and characterisation of GaSb and GaInSb feed materials A1 Mitric, A. A1 Corregidor, V. A1 Alves, L. C. A1 Amariei, A. A1 Díaz-Guerra Viejo, Carlos A1 Piqueras de Noriega, Javier AB GaSb and GaInSb compounds were synthesised from the component elements using a new technique. The effect of the electro-magnetic induction on the conductor materials is used in order to heat, melt and mix the Ga, Sb and In elements. The homogeneity and the structural quality of the elaborated feed materials were verified by using different techniques: Scanning electron microscopy-energy dispersive spectroscopy (SEM-EDS), Rutherford backscattering (RBS), Particle-induced X-ray emission (PIXE), Cathodoluminescence in the scanning electron microscope (SEM-CL), Wavelength dispersive X-ray microanalysis (WDX), Transmission electron microscopy (TEM). It is found that the GaSb material totally reacts but GaInSb alloys present heterogeneities at the micro-and macroscale. PB Elsevier Science B.V. SN 0022-0248 YR 2005 FD 2005-02-15 LK https://hdl.handle.net/20.500.14352/51131 UL https://hdl.handle.net/20.500.14352/51131 LA eng NO [1] V.M. Goldschmidt, Skrifter Norsche Videnskaps Akads. Oslo, I: Mat. Naturv. kl. (1926) VIII.[2] N.K. Udayashankar, H.L. Bhat, Bull. Mater. Sci. 24 (2001) 445.[3] C. Marin, P.S. Dutta, E. Dieguez, P. Dusserre, T. Duffar, J. Crystal Growth 173 (1997) 271.[4] M. Harsy, T. Go¨ ro¨ g, E. Lendvay, F. Koltai, J. Crystal Growth 53 (1981) 234.[5] Y.J. Van der Meulen, J. Phys. Chem. Solids 28 (1967) 25. [6] D.P. Detwiler, Phys. Rev. 97 (1955) 1572.[7] K. Kakimoto, T. Hibiya, J. Appl. Phys. 66 (1989) 4181.[8] N.P. Barradas, C. Jeynes, R.P. Webb, Appl. Phys. Lett. 71 (1997) 291.[9] M.F. Chioncel, C. Díaz-Guerra, J. Piqueras, N. Duhanian, T. Duffar, J. Optoelectron. Adv. M. 6 (2004) 237.[10] F.S. Juang, Y.K. Su, T.S. Wu, Solid State Electron. 34 (1991) 1225.[11] M. Nakajima, T. Katsumata, K. Terashima, K. Ishida, Jpn. J. Appl. Phys. 24 (1985) L65.[12] A.J.R. de Kock, W.M. van de Wijgert, J.H.T. Hengst, P.J. Roksnoer, J.M. Huybregts, J. Crystal Growth 41 (1977) 13.[13] C. Potard, P. Dusserre, T. Duffar, Cryst. Res. Technol. 32 (1997) 925.[14] B. Méndez, P.S. Dutta, J. Piqueras, E. Diéguez, Appl. Phys. Lett. 67 (1995) 2648. NO © 2004 Elsevier B.V. All rights reserved.This work was done under the European Community Grant HPRN-CT-2001-00199 ‘‘Thermo-Photo-Voltaic cell based on GaSb’’. The authors thank Prof. Th. Duffar, Prof. E.K. Polychroniadis, and Dr. N.P. Barradas for their support. NO European Community DS Docta Complutense RD 1 may 2024