TY  - JOUR
AU  - Prado Millán, Álvaro Del
AU  - San Andrés Serrano, Enrique
AU  - Martil De La Plaza, Ignacio
AU  - González Díaz, Germán
AU  - Kliefoth, K.
AU  - Füssel, W.
PY  - 2004
DO  - 10.1088/0268-1242/19/2/001
SN  - 0268-1242
UR  - https://hdl.handle.net/20.500.14352/51125
T2  - Semiconductor Science and Technology
AB  - We have studied and compared the effects of conventional annealing in a forming gas atmosphere (430 degreesC, 20 min) and rapid thermal annealing (RTA) in an inert Ar atmosphere (400-1000 degreesC, 30 s) on Al/SiOxNyHz/Si devices. The samples were...
LA  - eng
M2  - 133
PB  - Iop Publishing Ltd
KW  - Silicon-Oxynitride Films
KW  - Electron-Cyclotron-Resonance
KW  - Chemical-Vapor-Deposition
KW  - Nitride Thin-Films. Paramagnetic Point-Defects
KW  - Structural-Properties
KW  - SiOxNyHz Films
KW  - Oxide-Films
KW  - Nitrogen
KW  - Oxidation.
TI  - Annealing effects on the interface and insulator properties of plasma-deposited Al/SiOxNyHz/Si devices
TY  - journal article
VL  - 19
ER  -