%0 Journal Article
%A Zaldivar, M.H.
%A Fernández Sánchez, Paloma
%A Piqueras De Noriega, Francisco Javier
%T Study of defects in GaN films by cross-sectional cathodoluminescence
%D 1998
%@ 0021-8979
%U https://hdl.handle.net/20.500.14352/59145
%X Cathodoluminescence (CL) in the scanning electron microscope has been used to study cross-sectional samples on GaN epitaxial films grown on sapphire. Increased CL emission, attributed to the presence of stacking faults and decorated dislocations, is observed in a region of the buffer layer close to the film-substrate interface, In the epilayers also a region of enhanced emission is observed which is partially caused by Si doping and in which structural defects are involved. Cross-sectional CL appears as a useful method to reveal features of the spatial distribution of luminescence, not detectable by plan-view measurements.
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