RT Journal Article
T1 Study of defects in GaN films by cross-sectional cathodoluminescence
A1 Zaldivar, M.H.
A1 Fernández Sánchez, Paloma
A1 Piqueras De Noriega, Francisco Javier
AB Cathodoluminescence (CL) in the scanning electron microscope has been used to study cross-sectional samples on GaN epitaxial films grown on sapphire. Increased CL emission, attributed to the presence of stacking faults and decorated dislocations, is observed in a region of the buffer layer close to the film-substrate interface, In the epilayers also a region of enhanced emission is observed which is partially caused by Si doping and in which structural defects are involved. Cross-sectional CL appears as a useful method to reveal features of the spatial distribution of luminescence, not detectable by plan-view measurements.
PB American Institute of Physics
SN 0021-8979
YR 1998
FD 1998-03-01
LK https://hdl.handle.net/20.500.14352/59145
UL https://hdl.handle.net/20.500.14352/59145
LA eng
NO © 1998 American Institute of Physics.This work was supported by DGICYT (Project PB-1256). M.H.Z. thans AECI and CoNaCyt for a research grant.
NO DGICYT
NO AECI
NO CoNaCyT
DS Docta Complutense
RD 21 dic 2025