TY  - JOUR
AU  - Zaldivar, M.H.
AU  - Fernández Sánchez, Paloma
AU  - Piqueras De Noriega, Francisco Javier
PY  - 1998
DO  - 10.1063/1.366634
SN  - 0021-8979
UR  - https://hdl.handle.net/20.500.14352/59145
T2  - Journal of Applied Physics
AB  - Cathodoluminescence (CL) in the scanning electron microscope has been used to study cross-sectional samples on GaN epitaxial films grown on sapphire. Increased CL emission, attributed to the presence of stacking faults and decorated dislocations, is...
LA  - eng
M2  - 2796
PB  - American Institute of Physics
TI  - Study of defects in GaN films by cross-sectional cathodoluminescence
TY  - journal article
VL  - 83
ER  -