RT Journal Article
T1 Field emission properties of gallium oxide micro- and nanostructures in the scanning electron microscope
A1 López, Iñaki
A1 Nogales Díaz, Emilio
A1 Hidalgo Alcalde, Pedro
A1 Méndez Martín, Bianchi
A1 Piqueras de Noriega, Javier
AB The field emission properties of gallium oxide nanowires grown by thermal evaporation-deposition have been investigated inside the chamber of a scanning electron microscope. Turn on electric fields and enhancement factors have been determined for Sn doped nanowires. X-ray photoelectron spectroscopy measurements have been performed to calculate the work function of Sn doped Ga2O3. The results show improved field emission properties of Sn doped Ga2O3 nanowires, with a lower threshold field (below 1.0 V/mu m). The obtained values are competitive with those achieved in other nanostructured materials, including carbon nanotubes.
PB Wiley-V C H Verlag GMBH
SN 1862-6300
YR 2012
FD 2012-01
LK https://hdl.handle.net/20.500.14352/44078
UL https://hdl.handle.net/20.500.14352/44078
LA eng
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NO © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.This work has been supported by MICINN (Projects MAT 2009-07882 and Consolider Ingenio CSD 2009-00013) and by BSCH-UCM (Project GR35-10A-910146). The authors are grateful to Dr Luca Gregoratti at the Sincrotrone Trieste for useful advises on XPS measurements.
NO MICINN
NO BSCH-UCM
DS Docta Complutense
RD 4 may 2024