RT Journal Article
T1 Cathodoluminescence characterization of Ge-doped CdTe crystals
A1 Pal, U
A1 Fernández Sánchez, Paloma
A1 Piqueras de Noriega, Javier
A1 Sochinskii, N. V.
A1 Dieguez, E.
AB Cathodoluminescence (CL) microscopic techniques have been used to study the spatial distribution of structural defects and the deep levels in CdTe:Ge bulk crystals. The effect of Ge doping with concentrations of 10(17) and 10(19) cm(-3) on the compensation of V-Cd in CdTe has been investigated. Dependence of the intensity distribution of CL emission bands on the dopant concentration has been studied. Ge doping causes a substantial reduction of the generally referred to 1.40 eV luminescence, which is often present in undoped CdTe crystals, and enhances the 0.91 and 0.81 eV emissions.
PB Amer Inst Physics
SN 0021-8979
YR 1995
FD 1995-08-01
LK https://hdl.handle.net/20.500.14352/59253
UL https://hdl.handle.net/20.500.14352/59253
LA eng
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NO ©  1995 American Institute of Physics.Two of the authors (U. P. and N. V. S.) thank Spanish MEC for the postdoctoral research grants. The work has been supported by the DGICYT (PB90-1017 and PB93-1256) projects.
NO DGICYT
NO MEC
DS Docta Complutense
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