%0 Journal Article
%A Rezgui, B.
%A Sibai, A.
%A Nychyporuk, T.
%A Lemiti, M.
%A Bremond, G.
%A Maestre Varea, David
%A Palais, O.
%T Effect of total pressure on the formation and size evolution of silicon quantum dots in silicon nitride films
%D 2010
%@ 0003-6951
%U https://hdl.handle.net/20.500.14352/42747
%X The size of silicon quantum dots (Si QDs) embedded in silicon nitride (SiN(x)) has been controlled by varying the total pressure in the plasma-enhanced chemical vapor deposition (PECVD) reactor. This is evidenced by transmission electron microscopy and results in a shift in the light emission peak of the quantum dots. We show that the luminescence in our structures is attributed to the quantum confinement effect. These findings give a strong indication that the quality (density and size distribution) of Si QDs can be improved by optimizing the deposition parameters which opens a route to the fabrication of an all-Si tandem solar cell.
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