TY  - JOUR
AU  - Rezgui, B.
AU  - Sibai, A.
AU  - Nychyporuk, T.
AU  - Lemiti, M.
AU  - Bremond, G.
AU  - Maestre Varea, David
AU  - Palais, O.
PY  - 2010
DO  - 10.1063/1.3427386
SN  - 0003-6951
UR  - https://hdl.handle.net/20.500.14352/42747
T2  - Applied physics letters
AB  - The size of silicon quantum dots (Si QDs) embedded in silicon nitride (SiN(x)) has been controlled by varying the total pressure in the plasma-enhanced chemical vapor deposition (PECVD) reactor. This is evidenced by transmission electron microscopy...
LA  - eng
PB  - Amer Inst Physics
KW  - Nanocrystals
KW  - Confinement
TI  - Effect of total pressure on the formation and size evolution of silicon quantum dots in silicon nitride films
TY  - journal article
VL  - 96
ER  -