%0 Journal Article
%A Olea Ariza, Javier
%A Gonzalo, J.
%A Siegel, B.
%A Braña, A. F.
%A Godoy Pérez, G.
%A Benítez Fernández, R.
%A Caudevilla Gutiérrez, Daniel
%A Algaidy, Sari
%A Pérez Zenteno, Francisco José
%A Duarte Cano, Sebastián
%A Prado Millán, Álvaro Del
%A García Hemme, Eric
%A García Hernansanz, Rodrigo
%A Pastor Pastor, David
%A San Andrés Serrano, Enrique
%A Martil De La Plaza, Ignacio
%A Benítez Fernández, Rafael
%T Optoelectronic properties of GaP:Ti photovoltaic devices
%D 2024
%U https://hdl.handle.net/20.500.14352/110945
%X Supersaturated GaP is of interest for the photovoltaic field since optical transitions at energies below the bandgap (2.26 eV) could enhance the overall device efficiency up to theoretically 60%. We have previously demonstrated that Ti supersaturated GaP can be obtained by means of ion implantation and pulsed-laser melting with high structural quality and measured its below-bandgap photoconductivity. In this work we report the first results of a GaP:Ti based photovoltaic device. We have fabricated and measured photovoltaic devices with a GaP:Ti absorber layer showing enhanced external quantum efficiency at wavelengths above 550 nm. Also, we have measured the absorption coefficient (around 104 cm−1) and refractive index of this absorber layer. Finally, current-voltage curves in darkness were measured and analyzed using a two-diodes model, showing improvable characteristics. Ideas to enhance the properties of the devices are suggested.
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